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STT13005
High voltage fast-switching NPN power transistor
Features

High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed
Applications

Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converters
3
SOT-32
2
1
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking T13005 T13005 Package SOT-32 SOT-32 Packaging Tube Bag
Order codes STT13005 STT13005-K
November 2009
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Electrical ratings
STT13005
1
Electrical ratings
Table 2.
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 C Storage temperature Max. operating junction temperature Value 700 400 9 2 4 1 2 45 -65 to 150 150 Unit V V V A A A A W C C
Table 3.
Symbol RthJC
Thermal data
Parameter Thermal resistance junction-case Max Value 2.8 Unit C/W
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STT13005
Electrical characteristics
2
Electrical characteristics
Tcase = 25 C unless otherwise specified. Table 4.
Symbol ICES ICEO VEBO
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Emitter-base voltage (IC = 0) Test conditions VCE = 700 V VCE = 700 V TC = 125 C VCE = 400 V IE = 10 mA 9 Min. Typ. Max. 100 500 250 Unit A A A V
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage
IC = 10 mA IC = 0.5 A IC = 0.8 A IC = 1.6 A IC = 0.5 A IC = 0.8 A IC = 1.6 A IB = 125 mA _ IB = 0.2 A _ IB = 0.4 A IB = 125 mA _ IB = 0.2 A _ IB = 0.4 A
400 0.5 1 1.5 1 1.3 1.5 10 8 0.4 3.2 0.25 0.8 0.16 50
V V V V V V V
VBE(sat) (1)
Base-emitter saturation voltage
hFE (1)
DC current gain Resistive load Rise time Storage time Fall time Inductive load Storage time Fall time
IC = 0.5 A _ VCE = 5 V IC = 2 A _ _ VCE = 5 V VCC= 125 V IC = 1 A IB1 = -IB2 = 0.2 A IB1 = 0.2 A IC = 1 A VBE(off) = -5 V L = 50 mH VClamp = 300 V
tr ts tf ts tf
0.7 4.5 0.4
s s s s s
1. Pulse test: pulse duration 300 s, duty cycle 2 %
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Electrical characteristics
STT13005
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4.
DC current gain (VCE = 1 V)
Figure 5.
DC current gain (VCE = 5 V)
Figure 6.
Collector-emitter saturation voltage
Figure 7.
Base-emitter saturation voltage
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STT13005 Figure 8. Inductive load fall time Figure 9.
Electrical characteristics Inductive load storage time
Figure 10. Resistive load fall time
Figure 11. Resistive load storage time
Figure 12. Reverse biased SOA
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Electrical characteristics
STT13005
2.2
Test circuits
Figure 13. Resistive load switching test circuit
1. Fast electronic switch 2. Non-inductive resistor
Figure 14. Inductive load switching test circuit
1. Fast electronic switch 2. Non-inductive resistor 3. Fast recovery rectifier
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Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark.
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Package mechanical data
STT13005
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STT13005
Revision history
4
Revision history
Table 5.
Date 29-May-2007 10-Jul-2008 03-Nov-2009
Document revision history
Revision 1 2 3 Initial release Updated: VCEO(sus) condition in Table 4 on page 3, SOT-32 mechanical data Added order code STT13005-K Table 1 on page 1 Changes
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STT13005
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